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Structure and dynamics of a single 2/spl pi/VBL in a magnetic domain wall

机译:磁畴壁中单个2 / spl pi / VBL的结构和动力学

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The dynamics of a single three dimensional 2/spl pi/-vertical Bloch line (2/spl pi/VBL) structure in a domain wall in garnet have been investigated using large scale numerical simulations. The domain wall distorts when a 2/spl pi/-VBL is present at equilibrium. For a film thickness of 1.28 /spl mu/m, a maximum wall tilt of 400 /spl Aring/ (/spl sim/2/spl deg/) was found at the 2/spl pi/VBL. The 2/spl pi/VBL longitudinal wall microdeformation is 1.22 /spl mu/m, or almost twice the 2/spl pi/VBL width. When fields normal to the film surface are applied, wall and 2/spl pi/VBL velocities, along with VBL to wall velocity ratio, are calculated. At fields lower than 10 Oe, the velocity ratio at dynamic equilibrium is equal to 7.5. It is half the theoretical ratio /spl pi//spl radic/(Q/2/spl alpha/) (quality factor Q=4.0, damping constant /spl alpha/=0.2) for a periodic chain of /spl pi/VBLs. At fields between 10 to 12 Oe, saturation velocities of 10 m/s and 80 m/s are calculated for the wall and 2/spl pi/VBL respectively. At higher fields, horizontal Bloch lines (HBLs) are nucleated on each side of the 2/spl pi/VBL structure. Both the wall and 2/spl pi/VBL velocities decrease along with the velocity ratio.
机译:使用大规模数值模拟研究了石榴石畴壁中单个三维2 / spl pi /垂直Bloch线(2 / spl pi / VBL)结构的动力学。当2 / spl pi / -VBL处于平衡状态时,畴壁会变形。对于1.28 / spl mu / m的膜厚度,在2 / spl pi / VBL处发现最大壁倾斜为400 / spl Aring /(/ spl sim / 2 / spl deg /)。 2 / spl pi / VBL纵向壁微变形为1.22 / spl mu / m,几乎是2 / spl pi / VBL宽度的两倍。当施加垂直于薄膜表面的场时,将计算壁速度和2 / spl pi / VBL速度,以及VBL与壁速度之比。在低于10 Oe的场上,动态平衡下的速度比等于7.5。对于/ spl pi / VBL的周期链,它是理论比率/ spl pi // spl radic /(Q / 2 / spl alpha /)(质量因子Q = 4.0,阻尼常数/ spl alpha / = 0.2)的一半。在10到12 Oe之间的场中,分别计算出壁的饱和速度为10 m / s,饱和壁速度为80 m / s,spi pi / VBL为饱和速度。在较高的场,水平Bloch线(HBL)在2 / spl pi / VBL结构的每一侧成核。壁速度和2 / spl pi / VBL速度均随速度比降低。

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