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首页> 外文期刊>IEEE Transactions on Magnetics >Magnetoresistance due to domain walls in micron scale Fe wires with stripe domains
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Magnetoresistance due to domain walls in micron scale Fe wires with stripe domains

机译:具有条纹磁畴的微米级铁丝中磁畴壁引起的磁阻

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摘要

The magnetoresistance (MR) associated with domain boundaries has been investigated in microfabricated bcc Fe (0.65 to 20 /spl mu/m linewidth) wires with controlled stripe domains. Domain configurations have been characterized using MFM. MR measurements as a function of field angle, temperature and domain configuration are used to estimate MR contributions due to resistivity anisotropy and domain walls. Evidence is presented that domain boundaries enhance the conductivity in such microstructures over a broad range of temperatures (1.5 K to 80 K).
机译:与微区边界相关的磁阻(MR)已在具有受控条纹区的超细bcc Fe(0.65至20 / spl mu / m线宽)线中进行了研究。域配置已使用MFM进行了表征。 MR测量是视场角,温度和畴构型的函数,用于估算由于电阻率各向异性和畴壁而引起的MR贡献。证据表明,在很宽的温度范围(1.5 K至80 K)下,畴边界增强了此类微结构的电导率。

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