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MR recording media: microstructure and magnetic properties

机译:MR记录介质:微观结构和磁性

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To achieve high recording areal density, it is required that future MR media have high coercivity (H/sub c/), high coercive and remanent squareness (S/sup */ and S), low media noise and narrow track recording performance. The microstructure, which strongly affects magnetic properties, should be fully controlled in media fabrication process. The microstructural characteristics like grain size, grain separation, orientation, lattice mismatch, second phases, and stacking faults can affect intergranular magnetic coupling and media noise. The composition of ternary and quaternary cobalt alloy systems, e.g. CoCrTa, CoCrPt, and CoCrPtTa, has significant effects on magnetic performances. The underlayer design, e.g. Cr, CrV/sub x/, and CrTi/sub x/, can affect lattice mismatch, stacking fault density, and other microstructural features. Stress, shadowing, preferred orientation, and c-axis alignment are four mechanisms which control orientation ratio (OR). Oriented medium has more stress-induced noise than isotropic medium has. Thin film medium with bicrystal structure has 5 dB better SNR than non-bicrystal medium. Ultra clean sputtering process (UC-process) can enhance coercivity and reduce noise. For GMR recording media, it requires Hc<3000 Oe and M/sub r/t >0.5 memu/cm/sup 2/. Media with CoCrPtTa, and CoSm/Cr design will be compared for areal density upto 10 Gb/in/sup 2/. Mechanisms of high coercive force and low noise in MR media are reviewed in connection with microstructure and magnetic properties.
机译:为了实现高记录面密度,要求未来的MR介质具有高矫顽力(H / sub c /),高矫顽力和剩余矩形度(S / sup * /和S),低介质噪声和窄轨道记录性能。强烈影响磁性的微观结构应在介质制造过程中完全控制。晶粒尺寸,晶粒分离,取向,晶格失配,第二相和堆垛层错等微观结构特征会影响晶间磁耦合和介质噪声。三元和四元钴合金体系的组成,例如CoCrTa,CoCrPt和CoCrPtTa对磁性能有重大影响。底层设计,例如Cr,CrV / sub x /和CrTi / sub x /会影响晶格失配,堆垛层错密度和其他微结构特征。应力,阴影,首选方向和c轴对齐是控制方向比率(OR)的四种机制。定向介质比各向同性介质具有更多的应力诱发噪声。具有双晶结构的薄膜介质的SNR比非双晶介质好5 dB。超洁净溅射工艺(UC工艺)可以提高矫顽力并降低噪音。对于GMR记录介质,它要求Hc <3000 Oe,并且M / sub r / t> 0.5 memu / cm / sup 2 /。比较具有CoCrPtTa和CoSm / Cr设计的介质的面密度最高10 Gb / in / sup 2 /。结合磁组织和磁性能,综述了MR介质中高矫顽力和低噪声的机理。

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