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Electro-ferrite plating of magnetite at 24-80/spl deg/C

机译:24-80 / spl deg / C的磁铁矿电​​镀铁氧体

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摘要

At room temperature (24/spl deg/C) magnetite (Fe/sub 3/O/sub 4/) films are successfully grown from an aqueous solution utilizing anodic oxidation of Fe/sup 2+/ to Fe/sup 3+/. Applying DC anodic voltage of 0.4 V, single phase Fe/sub 3/O/sub 4/ films are grown at various temperatures from 24 to 80/spl deg/C on NESA glass substrates from mixed solutions of FeCl/sub 2/+NH/sub 3/. Fixing the concentration of FeCl/sub 2/, the concentrations at which we can obtain the highest film deposition rate are determined at 24/spl deg/C and 80/spl deg/C. The films have a saturation magnetization of magnitude equal to that of bulk sample.
机译:在室温(24 / spl deg / C)下,利用Fe / sup 2 + /到Fe / sup 3 + /的阳极氧化作用,成功地从水溶液中生长出磁铁矿(Fe / sub 3 / O / sub 4 /)薄膜。施加0.4 V的DC阳极电压,在NESA玻璃基板上从FeCl / sub 2 / + NH的混合溶液在24至80 / spl deg / C的不同温度下生长单相Fe / sub 3 / O / sub 4 /膜。 / sub 3 /。固定FeCl / sub 2 /的浓度后,可以得到最高成膜速率的浓度确定为24 / spl deg / C和80 / spl deg / C。薄膜的饱和磁化强度等于块状样品的饱和磁化强度。

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