Bias voltage dependence of tunneling giant magnetoresistance in heterogeneous Fe-SiO/sub 2/ granular films

摘要

Fe-SiO/sub 2/ granular films with CPP (current perpendicular to plane) structure have been prepared in various Ar gas pressures by RF magnetron sputtering. The temperature dependence of resistivity and the tunneling magnetoresistance is studied as a function of the bias voltage applied between the electrodes of the CPP structure. Peculiar behavior has been observed such as the bias voltage dependence of the magnetoresistance ratio and the linear decrease in the resistivity with H above 1 T.