[110] grain growth and magnetic properties in thin grain-oriented silicon sheets with ultimately low loss were investigated. A final-annealing at 1150/spl deg/C for 20 min enables us to obtain the thin sheets covered with only [110] grains and consequently the magnetic induction at 800 A/m, B/sub g/ reached 1.9 T.
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机译:[110]研究了最终损耗低的薄取向硅片的晶粒生长和磁性。在1150 / spl deg / C的温度下进行20分钟的最终退火使我们能够获得仅覆盖[110]晶粒的薄板,因此在800 A / m,B / sub g /的磁感应强度下达到1.9T。
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