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Observation of magnetic domain structure and switching in barium ferrite thin films

机译:钡铁氧体薄膜的磁畴结构和转换的观察

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Magnetic domain structure and switching mechanism were investigated in individual barium ferrite grains with sizes ranging from 0.5-7 /spl mu/m. Magnetic force microscopy (MFM) was used to image grains in sputtered Pt-doped barium ferrite thin films. The switching thresholds of the different grains were measured by applying successively larger magnetic fields to the sample and observing which grains switched. Application of a field to as-annealed samples swept out multidomain structures at a field of H/sub ini//spl ap/1000 Oe, which was relatively independent of grain size. It was found that, after the grains had been saturated, a different field H/sub rev/ had to be applied to saturate the grain in the opposite direction in large size grains (about 4 /spl mu/m) H/sub ini//spl ap/H/sub rev/; whereas for grains with sizes of 1-3 /spl mu/m, H/sub rev/ varies from approximately equal to H/sub ini/ to many times larger. Domain wall motion was found to dominate the reversal process in grains larger than 4 /spl mu/m, as suggested by discontinuous magnetization jumps and an inverse-cosine angular dependence of H/sub rev/. Reversal in grains with sizes between 0.5 and 1 /spl mu/m is believed to be dominated by incoherent rotation, as indicated by the angular dependence of H/sub rev/.
机译:研究了单个钡铁氧体晶粒的磁畴结构和转换机制,晶粒尺寸为0.5-7 / spl mu / m。磁力显微镜(MFM)用于对溅射的掺杂Pt的钡铁氧体薄膜中的晶粒进行成像。通过依次向样品施加更大的磁场并观察哪个晶粒进行了切换,来测量不同晶粒的切换阈值。在退火后的样品中施加磁场在H / sub ini // spl ap / 1000 Oe磁场中清除了多畴结构,这与晶粒尺寸相对无关。发现,在晶粒饱和后,必须施加不同的磁场H / sub rev /才能使大尺寸晶粒(约4 / spl mu / m)中的晶粒以相反的方向饱和H / sub ini / / spl ap / H / sub rev /;而对于大小为1-3 / spl mu / m的晶粒,H / sub rev /的变化范围大约等于H / sub ini /甚至大很多倍。如不连续磁化跃迁和H / sub rev /的反余弦角相关性所表明,在大于4 / spl mu / m的晶粒中,发现畴壁运动在逆过程中起主导作用。如H / sub rev /的角度相关性所示,晶粒尺寸在0.5和1 / splμm/ m之间的反转被认为是非相干旋转的主导。

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