Bi added Ba-ferrite thin films were prepared at room temperature with different Bi composition, and successively annealed in a vacuum to crystallize. The addition of Bi is effective in reducing the grain size. The M/sub s/, H/sub c/ and grain size for Bi-BaM films were about 150 emu/cm/sup 3/, 4 kOe and 40 nm, respectively, after annealing at 750 C for 30 seconds. A recording density D/sub 50/ of 130 kfrpi was obtained with Bi-BaM thin film disk with the film thickness of 100 nm.
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机译：在室温下制备具有不同Bi组成的Bi添加的Ba铁氧体薄膜，并在真空中连续退火以结晶。 Bi的添加有效地减小了晶粒尺寸。在750℃下退火30秒后，Bi-BaM膜的M / sub s /，H / sub c /和晶粒尺寸分别为约150emu / cm / sup 3 /，4kOe和40nm。用Bi-BaM薄膜盘以100nm的膜厚度获得130kfrpi的记录密度D / sub 50 /。
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