机译:MgO隧道势垒厚度对三端自旋霍尔纳米振荡器输出功率的影响
Department of Nanoelectronics, INL–International Iberian Nanotechnology Laboratory, Braga, Portugal;
Department of Nanoelectronics, INL–International Iberian Nanotechnology Laboratory, Braga, Portugal;
Department of Nanoelectronics, INL–International Iberian Nanotechnology Laboratory, Braga, Portugal;
Department of Quantum Materials, Science and Technology, INL–International Iberian Nanotechnology Laboratory, Braga, Portugal;
Department of Nanoelectronics, INL–International Iberian Nanotechnology Laboratory, Braga, Portugal;
Department of Nanoelectronics, INL–International Iberian Nanotechnology Laboratory, Braga, Portugal;
Department of Nanoelectronics, INL–International Iberian Nanotechnology Laboratory, Braga, Portugal;
Magnetic tunneling; Nanoscale devices; Tunneling magnetoresistance; Couplings; Magnetic anisotropy; Current measurement;
机译:MgO隧道势垒厚度对磁性隧道结中自旋转移铁磁共振和转矩的影响
机译:具有MgO势垒的完全外延磁性隧道结中自旋相关隧穿电阻的巨幅振荡与势垒厚度的关系
机译:同步堆叠旋转大厅纳米振荡器输出功率的相位差依赖性
机译:MgO隧道势垒厚度对三端自旋霍尔纳米振荡器的影响
机译:具有MgO隧道势垒的垂直磁性隧道结
机译:使用中等厚度的MgO势垒的高功率和低临界电流密度自旋传递扭矩纳米振荡器
机译:mgO隧道势垒厚度对自旋转移铁磁体的影响 磁隧道结中的共振和扭矩