SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)

摘要

The temperature range of SPICE models of bipolar and field-effect transistors is extended from the standard commercial level (-60 degrees C ... + 150 degrees C) to harsh conditions level (-200 degrees C ... + 300 degrees C) for low/high-temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements to the device equivalent circuit to take into account the thermal effects. The universal automated methodology of model parameters extraction from the experimental data measured at low and high temperatures is proposed. The good agreement between simulated and measured device characteristics is achieved. The RMS error is not more than 10%-20%.