首页> 外文期刊>IEEE transactions on circuits and systems . I , Regular papers >Novel Process and Temperature-Stable, IDD Sensor for the BIST Design of Embedded Digital, Analog, and Mixed-Signal Circuits
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Novel Process and Temperature-Stable, IDD Sensor for the BIST Design of Embedded Digital, Analog, and Mixed-Signal Circuits

机译:新型过程和温度稳定的IDD传感器,用于嵌入式数字,模拟和混合信号电路的BIST设计

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This paper proposes a new IDD sensor for built-in self-test (BIST) applications for digital, analog, and mixed-signal circuits. This novel, wide-band, nonintrusive, process and temperature-stable IDD sensor operates up to 230 MHz, which is 2.3X faster than previously proposed designs, and occupies 78.3% less area than another competing design. A BIST utilizing this novel IDD sensor is created and tested on numerous digital circuits, as well as on an op-amp and a mixer, achieving up to 90% fault coverage, while maintaining the performance of the circuit-under-test. The experiments were implemented in 0.18-m TSMC CMOS mixed-signal technology.
机译:本文提出了一种新的IDD传感器,用于数字,模拟和混合信号电路的内置自测(BIST)应用。这种新颖的,宽带,非侵入式,过程稳定且温度稳定的IDD传感器可在高达230 MHz的频率下运行,比先前提出的设计快2.3倍,并且比其他竞争设计减少78.3%的面积。利用这种新型IDD传感器的BIST可在众多数字电路以及运算放大器和混频器上进行创建和测试,实现高达90%的故障覆盖率,同时保持被测电路的性能。实验采用0.18米TSMC CMOS混合信号技术进行。

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