47% Power Reduction and 91% Area Reduction in Inductive-Coupling Programmable Bus for NAND Flash Memory Stacking

摘要

This paper presents a power reduction scheme and an area reduction scheme in inductive-coupling programmable bus for NAND flash memory stacking. A channel arrangement scheme using three coils enables random access for memory read and memory write. Transmit power is reduced by 47% compared to a previous design with shields. A coil layout style, herein noted as XY coil, allows for the coils to interleave with logic interconnections, resulting in area reduction of 91% relative to at the expense of only 17% transmit power increase. Relayed data transmission at 1.6 Gb/s and $hbox{BER} is achieved.