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Design of Low-Power Direct-Conversion RF Front-End With a Double Balanced Current-Driven Subharmonic Mixer in 0.13 $mu {rm m}$ CMOS

机译:具有0.13的双平衡电流驱动亚谐波混频器的低功率直接转换RF前端的设计 $ mu {rm m} $ CMOS

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摘要

A 402-MHz fully differential RF front-end was designed and implemented using 0.13 $mu {rm m}$ CMOS process. This design was targeted for low-power and low-cost direct conversion applications such as short-range radio in biomedical devices. This RF front-end consists of a differential CG-CS LNA with a positive- or negative-feedback technique and a frequency doubler subharmonic quadrature passive mixer. The subharmonic conversion passive mixer driven by current input signals (from a transconductor) and loaded with low impedance is implemented to minimize the LO self-mixing dc-offset and introduces a high linearity. The front-end was implemented on a 0.13 $mu {rm m}$ CMOS process and occupies 380 $mu {rm m} times ,$330 $mu {rm m}$ active chip area, which is approximately 50% of that of the conventional front-end. The RF front-end achieves 31 dB conversion gain, 13.6 dB noise figure (NF) and an in-band IIP3 of 3 dBm. The design consumes 2.25 mA from a 1.2 V power supply.
机译:使用0.13 $ mu {rm m} $ CMOS工艺设计并实现了402 MHz全差分RF前端。该设计针对低功耗和低成本的直接转换应用,例如生物医学设备中的短程无线电。该射频前端由具有正反馈或负反馈技术的差分CG-CS LNA和倍频器次谐波正交无源混频器组成。由电流输入信号(来自跨导体)驱动并加载低阻抗的次谐波转换无源混频器可实现,以最大程度地减小LO自混频的直流偏移并引入高线性度。前端是在0.13 $ mu {rm m} $ CMOS工艺上实现的,占用380 $ mu {rm m}次,$ 330 $ mu {rm m } $ 有源芯片面积,大约是传统前端面积的50%。 RF前端可实现31 dB的转换增益,13.6 dB的噪声系数(NF)和3 dBm的带内IIP3。该设计从1.2 V电源消耗2.25 mA电流。

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