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CMOS Image Sensor Based Physical Unclonable Function for Coherent Sensor-Level Authentication

机译:基于CMOS图像传感器的物理不可克隆功能,用于相干传感器级身份验证

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摘要

In the applications of biometric authentication and video surveillance, the image sensor is expected to provide certain degree of trust and resiliency. This paper presents a new low-cost CMOS image sensor based physical unclonable function (PUF) targeting a variety of security, privacy and trusted protocols that involves image sensor as a trusted entity. The proposed PUF exploits the intrinsic imperfection during the image sensor manufacturing process to generate unique and reliable digital signatures. The proposed differential readout stabilizes the response bits extracted from the random fixed pattern noises of selected pixel pairs determined by the applied challenge against supply voltage and temperature variations. The threshold of difference can be tightened to winnow out more unstable response bits from the challenge-response space offered by modern image sensors to enhance the reliability under harsher operating conditions and loosened to improve its resiliency against masquerade attacks in routine operating environment. The proposed design can be classified as a weak PUF which is resilient to modeling attacks, with direct access to its challenge-response pair restricted by the linear feedback shift register. Our experiments on the reset voltages extracted from a 64 64 image sensor fabricated in 180 nm 3.3 V CMOS technology demonstrated that robust and reliable challenge-response pairs can be generated with a uniqueness of 49.37% and a reliability of 99.80% under temperature variations of and supply voltage variations of .
机译:在生物认证和视频监控的应用中,期望图像传感器提供一定程度的信任和弹性。本文提出了一种新的基于低成本CMOS图像传感器的物理不可克隆功能(PUF),其针对各种安全性,隐私和受信任的协议,其中涉及图像传感器作为受信任的实体。所提出的PUF利用图像传感器制造过程中的固有缺陷来生成独特且可靠的数字签名。所提出的差分读出使从所选择的像素对的随机固定图案噪声中提取的响应位稳定下来,该噪声是由所施加的挑战针对电源电压和温度变化确定的。可以加紧差异阈值,以从现代图像传感器提供的质询响应空间中找出更多不稳定的响应位,以增强在更苛刻的操作条件下的可靠性,并放宽其以提高其在常规操作环境中抵抗化装舞会的弹性。所提出的设计可以归类为弱PUF,它可以抵抗建模攻击,并且可以直接访问其受线性反馈移位寄存器限制的质询-响应对。我们对从采用180 nm 3.3 V CMOS技术制造的64 64图像传感器提取的复位电压进行的实验表明,在温度变化为,电源电压的变化。

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