MRAM-Enhanced Low Power Reconfigurable Fabric With Multi-Level Variation Tolerance

摘要

A hybrid device technology reconfigurable logic fabric is proposed which leverages the cooperating advantages of distinct magnetic random access memory (MRAM)-based look-up tables (LUTs) to realize sequential logic circuits, along with conventional SRAM-based LUTs to realize combinational logic paths. A hierarchical top-down design approach is used to develop a hybrid spin/charge based FPGA (HSC-FPGA) starting from the configurable logic block (CLB) and slice structures down to LUT circuits and the corresponding device fabrication challenges. Circuit-level simulations indicate at least 40 and 83 read and standby power reduction, respectively, for MRAM-LUTs compared to SRAM-LUTs. However, MRAM-LUTs using spin transfer torque (STT) switching approach suffers from significant write energy consumption. Therefore, we have designed spin Hall effect (SHE)-assisted MRAM-LUTs realizing more than 67 and 61 reduction in reconfiguration energy and area consumption, respectively. Fabric-level simulations exhibit that HSC-FPGA achieves 70 and 30 reductions in standby and read power, respectively, compared to SRAM-based FPGAs for various ISCAS-89 and ITC-99 benchmark circuits. Finally, a multi-level method spanning device-sizing, circuit modular-redundancy, and component-level reconfiguration is developed to increase the process variation resiliency of the MRAM-LUTs. The power consumption and area utilization are analyzed to formulate tradeoffs resulting in recommendations toward future multi-device-based reconfigurable fabrics.