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首页> 外文期刊>IEEE transactions on biomedical circuits and systems >A CMOS Front-End With Integrated Magnetoresistive Sensors for Biomolecular Recognition Detection Applications
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A CMOS Front-End With Integrated Magnetoresistive Sensors for Biomolecular Recognition Detection Applications

机译:具有集成磁阻传感器的CMOS前端,用于生物分子识别检测应用

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The development of giant magnetoresistive (GMR) sensors has demonstrated significant advantages in nanomedicine, particularly for ultrasensitive point-of-care diagnostics. To this end, the detection system is required to be compact, portable, and low power consuming at the same time that a maximum signal to noise ratio is maintained. This paper reports a CMOS front-end with integrated magnetoresistive sensors for biomolecular recognition detection applications. Based on the characterization of the GMR sensor's signal and noise, CMOS building blocks (i.e., current source, multiplexers, and preamplifier) were designed targeting a negligible noise when compared with the GMR sensor's noise and a low power consumption. The CMOS front-end was fabricated using AMS 0.35 μm technology and the magnetoresistive sensors were post-fabricated on top of the CMOS chip with high yield (97.9%). Due to its low circuit noise (16 nV/√Hz) and over all equivalent magnetic noise (11.5 nT/√Hz), the full system was able to detect 250 nm magnetic nanoparticles with a circuit imposed signal-to-noise ratio degradation of only -1.4 dB. Furthermore, the low power consumption (6.5 mW) and small dimensions (7.59 mm) of the presented solution guarantees the portability of the detection system allowing its usage at the point-of-care.
机译:巨磁阻(GMR)传感器的发展已证明在纳米医学中具有显着的优势,特别是对于超灵敏的即时诊断。为此,在保持最大信噪比的同时,要求检测系统紧凑,便携式和低功耗。本文报告了一种集成了磁阻传感器的CMOS前端,用于生物分子识别检测应用。基于GMR传感器的信号和噪声的特征,与GMR传感器的噪声相比,CMOS模块(即电流源,多路复用器和前置放大器)的目标噪声可忽略不计且功耗低。 CMOS前端是使用AMS 0.35μm技术制造的,磁阻传感器以高成品率(97.9%)后制成在CMOS芯片顶部。由于其低的电路噪声(16 nV /√Hz)和所有等效的磁噪声(11.5 nT /√Hz),整个系统能够检测250 nm的磁性纳米粒子,而电路的信噪比却降低了仅-1.4 dB。此外,本解决方案的低功耗(6.5 mW)和小尺寸(7.59 mm)保证了检测系统的便携性,允许在现场使用。

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