首页> 外文期刊>Biomedical Circuits and Systems, IEEE Transactions on >A 2.5 mW/ch, 50 Mcps, 10-Analog Channel, Adaptively Biased Read-Out Front-End IC With Low Intrinsic Timing Resolution for Single-Photon Time-of-Flight PET Applications With Time-Dependent Noise Analysis in 90 nm CMOS
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A 2.5 mW/ch, 50 Mcps, 10-Analog Channel, Adaptively Biased Read-Out Front-End IC With Low Intrinsic Timing Resolution for Single-Photon Time-of-Flight PET Applications With Time-Dependent Noise Analysis in 90 nm CMOS

机译:具有低固有时序分辨率的2.5 mW / ch,50 Mcps,10模拟通道,自适应偏置读出前端IC,适用于单光子飞行时间PET应用,在90 nm CMOS中具有随时间变化的噪声分析

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摘要

This paper presents a 10-channel time-of-flight application-specific integrated circuit (ASIC) for positron emission tomography in a 90 nm standard CMOS process. To overcome variations in channel-to-channel timing resolution caused by mismatch and process variations, adaptive biases and a digital-to-analog converter (DAC) are utilized. The main contributions of this work are as follows. First, multistage architectures reduce the total power consumption, and detection bandwidths of analog preamplifiers and comparators are increased to 1 and 1.5 GHz, respectively, relative to those in previous studies. Second, a total intrinsic electronic timing resolution of 9.71 ps root-mean-square (RMS) is achieved (13.88 ps peak and 11.8 ps average of the 10 channels in 5 ASICs). Third, the proposed architecture reduces variations in channel-to-channel timing resolution to 2.6 bits (equivalent to 4.17 ps RMS) by calibrating analog comparator threshold levels. A 181.5 ps full-width-at-half-maximum timing resolution is measured with an avalanche photo diode and a laser setup. The power consumption is 2.5 mW using 0.5 and 1.2 V power supplies. The proposed ASIC is implemented in a 90 nm TSMC CMOS process with a total area of 3.3 mm × 2.7 mm.
机译:本文介绍了一种用于90纳米标准CMOS工艺中的正电子发射断层成像的10通道飞行时间专用集成电路(ASIC)。为了克服由不匹配和工艺变化引起的通道间时序分辨率的变化,采用了自适应偏置和数模转换器(DAC)。这项工作的主要贡献如下。首先,相对于以前的研究,多级架构降低了总功耗,并且模拟前置放大器和比较器的检测带宽分别增加到1 GHz和1.5 GHz。其次,实现了9.71 ps均方根(RMS)的总固有电子定时分辨率(5个ASIC中10个通道的峰值为13.88 ps,平均为11.8 ps)。第三,提出的架构通过校准模拟比较器阈值电平,将通道间时序分辨率的变化降低到2.6位(等于4.17 ps RMS)。使用雪崩光电二极管和激光装置测量了181.5 ps的半峰全宽最大时序分辨率。使用0.5和1.2 V电源时的功耗为2.5 mW。拟议的ASIC采用90 nm TSMC CMOS工艺实现,总面积为3.3 mm×2.7 mm。

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