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首页> 外文期刊>IEEE transactions on biomedical circuits and systems >A High Offset Distribution Tolerance High Resolution ISFET Array With Auto-Compensation for Long-Term Bacterial Metabolism Monitoring
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A High Offset Distribution Tolerance High Resolution ISFET Array With Auto-Compensation for Long-Term Bacterial Metabolism Monitoring

机译:高偏移分布公差高分辨率ISFET阵列,具有用于长期细菌新陈代谢监测的自动补偿

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This paper presents a CMOS ion-sensitive-field-effect-transistor (ISFET) array with superior offset distribution tolerance, resolution and linearity for long-term bacterial metabolism monitoring. A floating gate ISFET is adopted as the sensing front end to maximize ion sensitivity and support ultra-long-term measurement. To solve the DC offset issue induced by trapped chargers and drifts in each ISFET sensor, a complementary readout scheme with column offset compensation is proposed. P-type and N-type source followers are combined to cover a wide range of input DC offsets while maintaining small area and high linearity. The DC offset is digitally compensated during signal readout to facilitate global amplification and quantization. Fabricated in 0.18 mu m standard CMOS process, the ISFET array can tolerate an offset distribution beyond power supply with a linear pH-to-output response. Due to high ion sensitivity and low circuit noise, the whole system achieves a high resolution of 0.017 pH. The proposed ISFET system has successfully demonstrated an accurate pH monitoring of normal Escherichis coli growth for 11 hours and its response to antibiotics, showing long-term bacterial metabolism monitoring capability.
机译:本文介绍了CMOS离子敏感场 - 效应晶体管(ISFET)阵列,具有优异的偏移分布公差,分辨率和线性性,用于长期细菌代谢监测。采用浮栅ISFET作为传感前端,以最大化离子敏感性并支持超长期测量。为了解决被困器充电器引起的直流偏移问题并在每个ISFET传感器中漂移,提出了具有列偏移补偿的互补读出方案。组合P型和N型源粉丝以覆盖各种输入直流偏移,同时保持小面积和高线性。在信号读数期间,DC偏移在信号读出期间进行数字补偿,以促进全局放大和量化。在0.18μm标准CMOS工艺中制造,ISFET阵列可以容忍超出电源的偏移分布,具有线性pH-输出响应。由于高离子灵敏度和低电路噪声,整个系统实现了0.017 pH的高分辨率。拟议的ISFET系统成功地证明了对正常大肠杆菌的准确pH监测11小时,其对抗生素的反应,显示出长期细菌代谢监测能力。

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