Determination of homogeneous linewidth by spectral gain hole-burning in an erbium-doped fiber amplifier with GeO/sub 2/:SiO/sub 2/ core

摘要

Spectral gain hole-burning was observed at low temperatures in an erbium-doped fiber amplifier with GeO/sub 2/:SiO/sub 2/ core. At the peak wavelength lambda =1.535 mu m, homogeneous linewidths determined from the observed hole widths have a power-law dependence on temperature. At room temperature, the extrapolated homogeneous linewidth is 4 nm and the inhomogeneous linewidth is 8 nm.