Wideband and high-power compressively strained GaInAsP/InP multiple-quantum-well ridge waveguide lasers emitting at 1.3 mu m

摘要

Compressively strained 1.3- mu m GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together with high quantum efficiency of about 0.48 W/A and high power output of 60 mW before rollover. The laser also showed less temperature sensitivity up to an elevated temperature of 85 degrees C.