Proposal of a GaInAs/GaInAsP/InP antiguided filter laser array operating in single longitudinal mode

摘要

The authors propose a type of in-phase lateral- and single-longitudinal-mode laser array, the so-called antiguided filter laser array (AFLA), in which an antiguided filter region is inserted between a positive-index-guided multiple-strip array region with a shallow corrugation grating and a high-reflectivity region with deep corrugation. Threshold current as low as 100 mA was obtained for a five-element laser array with active region length of 300 mu m and total emitter width of 18 mu m, using five-pairs of Ga/sub 0.3/In/sub 0.7/As (3 nm)/GaInAsP (10 nm) compressively strained quantum wells.