The dependence of the maximum operating temperature of long wavelength semiconductor lasers on physical and material device parameters

摘要

An new expression relating the theoretical maximum operating temperature, T/sub max/, of an InGaAsP-InP-based laser to adjustable device structural and material parameters, such as the cavity length, L, facet reflectivity R, transparency current density, J/sub th/, and the modal gain coefficient /spl beta/, is presented. The validity of this relationship is demonstrated through an examination of empirical results on two sets of unstrained multiple quantum-well (MQW) laser structures with different QW widths.