Wide-temperature-range operation of 1.3-/spl mu/m beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask

摘要

A new fabrication method of high-quality thickness-tapered semiconductor waveguides is proposed based on controlling in-plane thickness during MOVPE by using a comb-shaped silicon shadow mask. It was used to fabricate a 1.3-/spl mu/m-wavelength narrow-beam (less than 13/spl deg/) InGaAsP-InP laser diode, which achieved high-power (over 20 mW) operation up to 85.