Dual-Wavelength AlInGaAs-InP Grating-Outcoupled Surface-Emitting Laser With an Integrated Two-Dimensional Photonic Lattice Outcoupler

摘要

Grating-outcoupled surface-emitting semiconductor lasers emitting two independent wavelengths separated by 9.5 nm from a common aperture in a monolithic crossed configuration is demonstrated. This configuration provides integrated wavelength multiplexing at ～1300 nm from a single aperture into a single fiber, simplifying packaging and reducing cost.