37-GHz Bandwidth Monolithically Integrated InP HBT/Evanescently Coupled Photodiode

摘要

In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55-(mu)m wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB (centre dot) OMEGA. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.