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首页> 外文期刊>IEEE Photonics Technology Letters >Optical Single Sideband Modulation Using Strong Optical Injection-Locked Semiconductor Lasers
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Optical Single Sideband Modulation Using Strong Optical Injection-Locked Semiconductor Lasers

机译:使用强光注入锁定半导体激光器进行光单边带调制

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摘要

We report on the experimental demonstration of optical single sideband (SSB) modulation using a directly modulated semiconductor laser under strong optical injection-locking. Modulation sidebands with 15-dB power ratio between the lower and upper sidebands have been achieved. The longer wavelength sideband is resonantly amplified by the injection-locked laser cavity mode. The radio-frequency performance of the optical SSB after 80-km fiber transmission is significantly improved compared with a typical symmetric sideband modulation of a free-running laser. A 622-Mb/s data transmission on a 20-GHz subcarrier is demonstrated over an 80-km fiber link.
机译:我们报告了在强光注入锁定下使用直接调制的半导体激光器对光学单边带(SSB)调制的实验演示。已经实现了在上下边带之间具有15 dB功率比的调制边带。较长波长的边带通过注入锁定激光腔模式共振放大。与自由运行的激光器的典型对称边带调制相比,光纤在传输80公里后的光学SSB的射频性能得到了显着改善。演示了在80公里光纤链路上20 GHz子载波上的622 Mb / s数据传输。

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