240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

摘要

We demonstrate an AlInAs–InGaAs separate absorption, grading, and multiplication avalanche photodiode (APD) with a very thin avalanche layer operating at 1550 nm for 10-Gb/s optical transmission achieving simultaneously high responsivity (0.9 A/W at ${M} = 1$), very low excess noise factor $({F}({M}=10) = 3)$, and very high gain-bandwidth product of 240 GHz. To our knowledge, this is the first time that a back-side illuminated planar junction AlInAs–InGaAs APD achieved such performances.