Uniform and Sampled Bragg Gratings in SOI Strip Waveguides With Sidewall Corrugations

摘要

We have demonstrated uniform and sampled Bragg gratings in silicon-on-insulator strip waveguides with symmetric sidewall corrugations. The fabrication is based on 193-nm deep ultraviolet lithography using a single mask. The measured reflection spectra of sampled gratings exhibit ten usable peaks spaced by 4.2 nm, and show good agreement with theoretical predictions.