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首页> 外文期刊>IEEE Photonics Technology Letters >An MMI-Based Mode (DE)MUX by Varying the Waveguide Thickness of the Phase Shifter
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An MMI-Based Mode (DE)MUX by Varying the Waveguide Thickness of the Phase Shifter

机译:通过改变移相器的波导厚度的基于MMI的模式(DE)MUX

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摘要

A two-mode (de)multiplexer [(DE)MUX] based on multimode interference couplers on InP substrate is proposed and experimentally demonstrated. A phase shifting section with a variation of the waveguide thickness is introduced to precisely control the phase shift to realize 100% mode conversion efficiency and multiplexing. Performance analysis of the (DE)MUX is carried out numerically, showing excellent properties with insertion loss <1.2 dB and crosstalk <−18.4 dB for both the TE0 and TE1 mode within the whole C -band. The proposed device is also fabricated and demonstrated on InP substrate.
机译:提出了一种基于InP衬底上的多模干涉耦合器的双模解复用器[[DE] MUX],并进行了实验验证。引入具有波导厚度变化的相移部分,以精确控制相移,以实现100%的模式转换效率和多路复用。 (DE)MUX的性能分析是通过数字进行的,显示了出色的特性,在整个C带内,TE0和TE1模式的插入损耗<1.2 dB,串扰<-18.4 dB。所提出的器件也在InP衬底上制造和演示。

著录项

  • 来源
    《IEEE Photonics Technology Letters》 |2016年第21期|2443-2446|共4页
  • 作者单位

    Chinese Academy of Sciences, Key Laboratory of Semiconductor Material Sciences and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors, Beijing, China;

    Chinese Academy of Sciences, Key Laboratory of Semiconductor Material Sciences and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors, Beijing, China;

    Chinese Academy of Sciences, Key Laboratory of Semiconductor Material Sciences and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors, Beijing, China;

    Chinese Academy of Sciences, Key Laboratory of Semiconductor Material Sciences and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors, Beijing, China;

    Chinese Academy of Sciences, Key Laboratory of Semiconductor Material Sciences and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors, Beijing, China;

    Chinese Academy of Sciences, Key Laboratory of Semiconductor Material Sciences and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors, Beijing, China;

    Chinese Academy of Sciences, Key Laboratory of Semiconductor Material Sciences and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors, Beijing, China;

    Chinese Academy of Sciences, Key Laboratory of Semiconductor Material Sciences and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors, Beijing, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Indium phosphide; III-V semiconductor materials; Phase shifters; Couplers; Insertion loss; Crosstalk; Fabrication;

    机译:磷化铟;III-V族半导体材料;移相器;耦合器;插入损耗;串扰;制造;

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