CW and mode-locked integrated extended cavity lasers fabricated using impurity free vacancy disordering

摘要

A phosphorus-doped silica (P:SiO/sub 2/) cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs-AlGaAs quantum-well laser structures during rapid thermal processing. Bandgap shift differences as large as 100 meV have been observed between samples capped with SiO/sub 2/ and with P:SiO/sub 2/. The technique has been used to fabricate GaAs-AlGaAs ridge lasers with integrated transparent waveguides. With a selective differential blue-shift of 30 nm in the absorption edge, devices with 400 /spl mu/m/2.73-mm-long active/passive sections exhibited an average threshold current of 9 mA in continuous-wave (CW) operation, only 2.2 mA higher than that of discrete lasers of the same active length and from the same chip. Extended cavity mode-locked lasers were also investigated and compared to all active devices. For the extended cavity device, the threshold current is a factor of 3-5 lower, the pulsewidth is reduced from 10.3 to 3.5 ps and there is a decrease in the free-running jitter level from 15 ps (measurement bandwidth 10 kHz-10 MHz) to 6 ps. In addition, the extended cavity lasers do not exhibit any self-pulsing modulation of the mode-locked pulse train, unlike the all-active lasers, and the optical spectra indicate that the pulses are more linearly chirped.