Charge neutrality violation in quantum-dot lasers

摘要

Theory of quantum-dot (QD) lasers is augmented to include, in a self-consistent manner, the QD-layer charge. The electron- and hole-level occupancies in QDs are obtained through the solution of the problem for the electrostatic-field distribution across the junction. They are shown to differ from each other. As a result, the local neutrality is broken down in each QD, i.e., the QD layer is charged. The key dimensionless parameters controlling the difference of the hole- and electron-level occupancies are revealed. The detailed analysis of the gain and spontaneous radiative recombination current density is given, having regard to the fact of violation of the charge neutrality in QDs. The gain-current density dependence is calculated, The voltage dependences of the electron- and hole-level occupancies, gain, and current density are obtained. Particular emphasis is given to the transparency and lasing threshold characteristics. Optimization of the QD-laser structure is carried out. The optimum surface density of QDs, minimizing the threshold current density, is shown to be distinctly higher than that calculated without regard for the lack of the charge neutrality in QDs.