The effect of carrier-induced change on the optical properties of AlGaAs-GaAs intermixed quantum wells

摘要

The carrier-induced effects in the change of absorption and refractive index on the AlGaAs-GaAs intermixing modified quantum wells (QW's) have been investigated theoretically. Band-filling, bandgap shrinkage, and free-carrier absorption have been included for various carrier concentrations. The Schrodinger and the Poisson equations have been considered self-consistently. The polarized absorption coefficients are calculated using the Kane k/spl middot/p method for a four band model and followed by the Kramers-Kranig transformation to obtain the refractive index change. The results obtained show a more enhanced bandgap renormalization and change of absorption, but a reduced change in refractive index for the larger intermixing extents. It is important to know the carrier-induced optical parameter changes the intermixed QW's because of their recent interests in photonics.