Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well andquantum-wire structures

摘要

Anodic oxides of GaAs were shown to enhance the intermixing innGaAs-AlGaAs quantum wells (QW) during rapid thermal processing.nProximity of the anodic oxide to the QW has been shown to influence thenphotoluminescence (PL) energy shift due to intermixing. Anodic oxideninduced intermixing has been used to enhance quantum-wire PL in thenstructures grown on V-groove patterned GaAs substrates. This has beennattributed to enhanced lateral confinement in these structures.nInjection of defects such as group-III vacancies or interstitials wasnconsidered to be driving force for the intermixing