A theoretical analysis of quantum-wire fabrication byvacancy-enhanced interdiffusion of quantum wells

摘要

The fabrication of quantum-wire structures using vacancy enhancedninterdiffusion of quantum wells is analyzed theoretically. Anphenomenological equation is used to describe the effects of strain onnvacancy diffusion. The quantum-wire confinement potentials are studiednas a function of the trench opening widths and the separation distancesnfrom the SiO2-AlGaAs interface. The lateral confinementnenergy is not a monotonic function of the trench opening width. It firstnincreases and then decreases when the trench opening width is decreased.nWhen the separation distance of the quantum wire from the interface isnreduced, the confinement potential is changed from a nonsquare profilento a square-well profile