Semiconductor lasers using diffused quantum-well structures

摘要

We assess the relative merits and prospects of using diffusednquantum-well (QW) structures in semiconductor lasers. First, differentntechniques to achieve interdiffusion are analyzed and compared. Second,nrecent development of semiconductor lasers using interdiffusionntechnique is also discussed. Third, the optical properties of diffusednQWs are studied. In addition, novel design of diffused QWs structures tonmaintain stable single-mode operation in semiconductor lasers isnproposed. Finally, brief discussion and conclusion are given