Determination of XUV optical constants by reflectometry using ahigh-repetition rate 46.9-nm laser

摘要

We report the measurement of the optical constants of Si, GaP,nInP, GaAs, GaAsP, and Ir at a wavelength of 46.9 nm (26.5 eV). Thenoptical constants were obtained from the measurement of the variation ofnthe reflectivity as a function of angle utilizing, as an illuminationnsource, a discharge pumped 46.9-nm table-top laser operated at anrepetition rate of 1 Hz. These measurements constitute the firstnapplication of an ultrashort wavelength laser to materialsnresearch