首页> 外国专利> METHOD FOR REGENERATING A SURFACE OF AN OPTICAL ELEMENT IN AN XUV RADIATION SOURCE AND XUV RADIATION SOURCE

METHOD FOR REGENERATING A SURFACE OF AN OPTICAL ELEMENT IN AN XUV RADIATION SOURCE AND XUV RADIATION SOURCE

机译:在XUV辐射源和XUV辐射源中再生光学元件表面的方法

摘要

Method for regenerating a surface of an optical element in a radiation source for electromagnetic radiation with a wavelength in the extreme ultraviolet wavelength range, H (EUV, XUV) in particular with a wavelength in the wavelength range between 10 nm and 15 nm, this radiation source comprising at least a chamber for arranging therein a plasma generating XUV or EUV radiation and the optical element, in particular a collector for bundling XUV or EUV radiation generated by the plasma and causing it to exit the chamber, according to which method a first Si, C or metal compound is arranged in the chamber which reacts in an equilibrium reaction with the material of the surface of the collector to form respectively a second Si, C or metal compound bonded to this surface, and XUV or EUV radiation source adapted for such a method.
机译:在辐射源中再生光学元件的表面的方法,该辐射源用于具有在极端紫外线波长范围内的波长H(EUV,XUV)的电磁辐射,特别是具有在10 nm和15 nm之间的波长范围内的波长的电磁辐射光源包括至少一个用于在其中布置产生XUV或EUV辐射的等离子体的腔室和光学元件,特别是用于将由等离子体产生的XUV或EUV辐射成束并使其离开腔室的收集器,根据该方法,第一Si在腔室中布置有C 1,C 2或C 2或金属化合物,其与收集器表面的材料在平衡反应中反应,以分别形成键合到该表面的第二Si,C 2或金属化合物,以及适用于该表面的XUV或EUV辐射源一个方法。

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