Self-sustained pulsation at 65°C through reduced carrieroverflow in AlGaInP laser diodes

摘要

Self-sustained pulsation at 65°C under continuous-wavenoperation was obtained in AlGaInP laser diodes with ansaturable-absorbing layer in part of the p-type cladding layer. Thencarrier overflow was significantly reduced to enable high-temperaturenperformance by increasing the number of well layers in the active layernto four and increasing the compressive strain of the active layern(εact=+0.5%). The effect of the carrier overflow onnself-sustained pulsation was investigated by analyzing the lasingnspectrum and lasing polarization. The large amount of luminescence fromnthe saturable-absorbing layer demonstrated that excessive carriernoverflow at high temperature prevents the saturable absorbing layernfunctioning as an absorber