Continuous-wave operation of GaInAsSb-GaSb type-II quantum-wellridge-lasers

摘要

Ridge-waveguide laser diodes emitting near 2.38 Μm have beennfabricated from GaInAsSb-GaSb type-II quantum-well (QW) structures grownnby molecular beam epitaxy. These devices operated continuous-wave (CW)nat room temperature, what is obtained for the first time from a type-IInQW laser. At 23°C threshold currents in the range 60-140 mA and CWnoutput powers exceeding 1 mW/facet were obtained. These lasers showed antendency to operate in a single longitudinal mode with a temperature rednshift of 0.1 nm/°C and a current red shift of 0.06 nm/mA