1-Gb/s integrated optical detectors and receivers in commercialCMOS technologies

摘要

The ability to produce a high-performance monolithic CMOSnphotoreceiver, including the photodetector, could enable greater use ofnoptics in short-distance communication systems. Such a receiver requiresnthe ability to simultaneously produce a photodetector compatible with anhigh-volume high-yield CMOS process, as well as the entire receiverncircuit. The quest for this element has yet to produce a clear winner,nand has proven quite challenging. We review some of the work in thisnfield with the goal of informing the reader as to the origin of thenchallenges and the implementation tradeoffs. Finally, we reportnexperimental results from a monolithic CMOS photoreceiver realized in an0.35-Μm production CMOS process, including a CMOS photodiode.nOperating at 1 Gb/s, the receiver requires an average input power ofn-6.3 dBm at 850 nm to obtain a measured bit error rate ofn1×10-9, and dissipates 1.5 mW at 2.2 V, increasing to 6nmW at 3.3 V