Novel integrated photodetector on Si LSI circuits. Opticallycontrolled MOSFET

摘要

We have demonstrated a novel integrated photo-detector on Sinlarge-scale integration circuits. This device integrated the lightnabsorption region on the gate of metal-oxide-semiconductor field-effectntransistor (MOSFET), and the long wavelength light controls the currentnof MOSFET. The GaInAs-InP multiple-quantum-well absorption region andnSiO2 of the MOSFET were directly bonded. From thenexperimental results, we confirmed that the light-controlled current wasnincreased by shortening the gate length of the MOSFET, and that an 1850nA/W responsivity was obtained in a 3.5-Μm gate length device using annirradiation of 1.5-Μm wavelength light