A novel approach for improved green-emitting II-VI lasers

摘要

New concepts to improve the performance of green-emitting laserndiodes, based on the ZnSe system, are presented. The benefits ofnimplantation-induced disordering (IID) and a novel alleged contactnstructure are discussed. Using IID, index-guided lasers with lownthresholds are fabricated. The introduction ofnLi3N-containing contacts leads to an acceptor indiffusionnresulting in an increased p-type doping level and thereby extremelynreduced turn-on voltages, threshold current densities, increasednwall-plug efficiencies, and extended continuous-wave lifetimes