机译:扩展波长跨度的多波长GaInAs-GaAs垂直腔面发射激光器阵列
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan;
surface emitting lasers; semiconductor laser arrays; laser cavity resonators; optical communication equipment; MOCVD; optical fabrication; quantum well lasers; gallium arsenide; III-V semiconductors; indium compounds; vertical cavity surface emitting lasers; multiwavelength VCSEL array; cavity resonance; gain peak; resonant wavelength; gain-cavity detuning; wavelength span; 12-channel array; growth-pressure control; epitaxial growth; 0.63 to 0.67 mA; 0.96 to 1.16 mum; GaInAs-GaAs;
机译:扩展波长跨度的多波长GaInAs-GaAs垂直腔面发射激光器阵列
机译:多波长GAINAS-GAAS垂直腔表面发射激光阵列,具有延伸波长跨度
机译:高应变GaInAs-GaAs量子阱在图形化衬底上的生长及其在多波长垂直腔面发射激光器阵列中的应用
机译:记录宽波长范围的多波长GaInAs / GaAs垂直腔表面发射激光器阵列
机译:用于高速局域网的激光阵列多波长垂直 - 夯实表面
机译:不同腔配置中锁模垂直外腔面发射激光器的时滞-微分方程建模
机译:基于AlGaAs生长后横向-垂直氧化的多波长垂直腔激光器阵列
机译:多波长垂直腔表面发射激光器阵列使用表面控制的mOCVD生长速率增强和减少