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机译:具有四级AlInGaN势垒的InGaN基紫外发射异质结构
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA;
III-V semiconductors; electroluminescence; photoluminescence; wide band gap semiconductors; semiconductor quantum wells; MOCVD; impurities; indium compounds; gallium compounds; aluminium compounds; ultraviolet sources; InGaN-based ultraviolet emitting heterostructures; quaternary AlInGaN barriers; InGaN quantum wells; metal-organic chemical vapor deposition; sapphire substrates; emission band; room temperature; UV band; blue emission admixture; single-quantum well structure; injected electrons recombination; p-side; multiple-quantum-well structures; injected carriers capture; UV emission; two emission mechanisms; blue impurity-related emission; temperature-induced blue jump; 3.307 eV; 375 nm; 170 to 190 K; InGaN; AlInGaN;
机译:具有四级AlInGaN势垒的InGaN基紫外发射异质结构
机译:基于IngaN的紫外线发射异质结构,季静脉屏障
机译:通过引入季级级末端量子屏障改善基于AlgaN的紫外-C(UV-C)发光二极管
机译:紫外光发射器的四元AlInGaN层的脉冲原子层外延。
机译:发光器件用ZnCdSSe四元合金的分子束外延和异质结构表征
机译:理解基于InGaN的发光二极管效率下降的实验方法综述
机译:基于Algan的深紫外发光二极管的奇妙光学性能与基于内仑的最后量子屏障和步进电子阻挡层