Quantum-Dot Phase Modulator Operating at 1300 nm

摘要

We analyze the properties of InAs-GaAs quantum-dot semiconductor optical amplifiers operating around 1300 nm. Using radiofrequency current modulation and phase sensitive detection, we characterize the phase-amplitude coupling (alpha-factor) as a function of injection current density. We obtain values for a up to 39 when the ground state is heavily saturated, and demonstrate large-signal phase modulator operation of the device.