High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide

摘要

We report on edge-emitting lasers based on the 1- and 2-D longitudinal photonic bandgap crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and controllable extension of the fundamental mode over a thick multilayer waveguide to obtain a very large vertical mode spot size and a narrow vertical beam divergence. We focus on high-performance PBC lasers in different material systems. Ridge 658 nm GaInP--AlGaInP single-mode PBC lasers demonstrate vertical beam divergence of 8$^circ$ and continuous-wave (CW) output power above 115 mW. Multimode CW power of 500 mW is achieved at 635 nm in 50-$mu$m-wide lasers. GaAs/AlGaAs PBC lasers emitting at 850 nm show a vertical far-field divergence of 9$^{circ}$, differential quantum efficiency of 95%, and maximum CW single mode power of 270 mW. InGaAs/AlGaAs PBC lasers emitting at 980 nm show a vertical far field of 4$^{circ}$ and single-mode output power of 1.2 W. Two-dimensional PBC lasers based on field-coupled multiridge arrays show stable single lateral mode operation with narrow lateral far field of 0.6$^{circ}$ and output power in pulsed mode of 20 W. Maximal CW output power in single lateral mode operation is 2.7 W.