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Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing
Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing
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机译:通过混合形成的具有光子带隙结构的边缘发射半导体激光器
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摘要
A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.
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