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首页> 外文期刊>Selected Topics in Quantum Electronics, IEEE Journal of >High-Brightness Quantum Well Tapered Lasers
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High-Brightness Quantum Well Tapered Lasers

机译:高亮度量子阱锥形激光器

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摘要

High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence down to angles of 15deg (full-width at half-maximum) were developed. For these layer structures, optimized tapered lasers were processed to achieve laterally a nearly diffraction-limited beam quality with beam propagation factors smaller than 2. Depending on the emission wavelength, the tapered devices reach an output power up to 12 W and a brightness of 1 GWmiddotcm-2middotsr-1.
机译:将介绍在650 nm至1080 nm光谱范围内具有高亮度的高功率量子阱激光器。已经开发出了一种改进的层结构,该结构具有窄的垂直远场散度,可向下扩展到15度(半峰全宽)。对于这些层结构,对优化的锥形激光器进行了处理,以在横向上实现近乎衍射极限的光束质量,且光束传播因子小于2。根据发射波长,锥形器件的输出功率可达12 W,亮度为1 GWmiddotcm-2middotsr-1。

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