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Silicon-Based Plasmonics for On-Chip Photonics

机译:片上光子学的硅基等离子体

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摘要

Silicon-based photonic devices dissipate substantially less power and provide a significantly greater information bandwidth than electronic components. Unfortunately, large-scale integration of photonic devices has been limited by their large, wavelength-scale size and the weak optical response of Si. Surface plasmons may overcome these two limitations. Combining the high localization of electronic waves with the propagation properties of optical waves, plasmons can achieve extremely small mode wavelengths and large local electromagnetic field intensities. Si-based plasmonics has the potential to not only reduce the size of photonic components to deeply subwavelength scales, but also to enhance the emission, detection, and manipulation of optical signals in Si. In this paper, we discuss recent advances in Si-based plasmonics, including subwavelength interconnects, modulators, and emission sources. From scales spanning slab waveguides to single nanocrystals, we show that Si-based plasmonics can enable optical functionality competitive in size and speed with contemporary electronic components.
机译:基于硅的光子器件比电子组件耗散的功率少得多,并且提供的信息带宽也大得多。不幸的是,光子器件的大规模集成受到其大的波长尺度尺寸和硅的弱光学响应的​​限制。表面等离子体激元可以克服这两个限制。将电子波的高度局域性与光波的传播特性结合在一起,等离激元可以实现极小的模式波长和大的局部电磁场强度。基于硅的等离子体激元不仅具有将光子组件的尺寸减小到深亚波长范围的潜力,而且还具有增强Si中光信号的发射,检测和操纵的潜力。在本文中,我们讨论了基于Si的等离子体激元的最新进展,包括亚波长互连,调制器和发射源。从鳞片状波导到单个纳米晶体的尺度,我们证明了基于Si的等离激元可以使光学功能在尺寸和速度上与现代电子组件相媲美。

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