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首页> 外文期刊>Selected Topics in Quantum Electronics, IEEE Journal of >Energy-per-Bit Limits in Plasmonic Integrated Photodetectors
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Energy-per-Bit Limits in Plasmonic Integrated Photodetectors

机译:等离子集成光电探测器的每位能量限制

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The energy consumption per transmitted bit is becoming a crucial figure of merit for communication channels. In this paper, we study the design tradeoffs in photodetectors, utilizing the energy per bit as a benchmark. We propose a generic model for a photodetector that takes optical and electrical properties into account. Using our formalism, we show how the parasitic capacitance of photodetectors can drastically alter the parameter values that lead to the optimal design. Finally, we apply our theory to a practical case study for an integrated plasmonic photodetector, showing that energies per bit below 100 attojoules are feasible despite metallic losses and within noise limitations without the introduction of an optical cavity or voltage amplifying receiver circuits.
机译:每个传输位的能量消耗正成为通信通道的关键性能指标。在本文中,我们以每位能量为基准,研究光电探测器的设计折衷。我们提出了一种光电探测器的通用模型,该模型考虑了光学和电气特性。使用我们的形式主义,我们展示了光电检测器的寄生电容如何极大地改变导致最佳设计的参数值。最后,我们将我们的理论应用于集成等离激元光电探测器的实际案例研究,结果表明,尽管金属损耗并且在噪声限制内,但不引入光腔或电压放大接收器电路,每比特能量低于100阿焦耳仍是可行的。

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